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www.irf.com 1 9/11/09 IRG7S313UPBF description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package

e c g n-channel gc e gate collector emitter e c g d 2 pak IRG7S313UPBF absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v i c @ t c = 100c continuous collector, v ge @ 15v a i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range c soldering temperature for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.6 c/w max. 20 160 40 30 300 -40 to + 150 78 31 0.63 v ce min 330 v v ce(on) typ. @ i c = 20a 1.35 v i rp max @ t c = 25c 160 a t j max 150 c key parameters

2 www.irf.com half sine wave with duty cycle = 0.05, ton=2 sec. r is measured at
pulse width 400 s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 330 ??? ??? v ? v ces / t j breakdown voltage temp. coefficient ??? 0.4 ??? v/c ??? 1.21 1.45 ??? 1.35 ??? 1.75 ??? v ??? 2.14 ??? ??? 1.41 ??? v ge(th) gate threshold voltage 2.2 ??? 4.7 v v ge(th) / t j gate threshold voltage coefficient ??? -10 ??? mv/c i ces collector-to-emitter leakage current ??? 1.0 10 25 150 ??? 75 ??? i ges gate-to-emitter forward leakage ??? ??? 100 na gate-to-emitter reverse leakage ??? ??? -100 g fe forward transconductance ??? 47 ??? s q g total gate charge ??? 33 ??? nc q gc gate-to-collector charge ??? 12 ??? t d(on) turn-on delay time ??? 1.0 ??? i c = 12a, v cc = 196v t r rise time ??? 13 ??? ns r g = 10 , l=210 h t d(off) turn-off delay time ??? 65 ??? t j = 25c t f fall time ??? 68 ??? t d(on) turn-on delay time ??? 11 ??? i c = 12a, v cc = 196v t r rise time ??? 14 ??? ns r g = 10 , l=200 h, l s = 150nh t d(off) turn-off delay time ??? 86 ??? t j = 150c t f fall time ??? 190 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j human body model machine model c ies input capacitance ??? 880 ??? c oes output capacitance ??? 47 ??? pf c res reverse transfer capacitance ??? 26 ??? l c internal collector inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l e internal emitter inductance ??? 7.5 ??? from package esd class 1c (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v conditions v ge = 0v, i ce = 250 a reference to 25c, i ce = 1ma v ge = 15v, i ce = 60a v ge = 15v, i ce = 12a v ge = 15v, i ce = 20a ? = 1.0mhz and center of die contact l = 220nh, c= 0.20 f, v ge = 15v l = 220nh, c= 0.20 f, v ge = 15v v cc = 240v, r g = 5.1 , t j = 100c v ce = v ge , i ce = 1.0ma v ce = 330v, v ge = 0v v ce = 330v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v a v ce = 330v, v ge = 0v, t j = 125c ??? 570 ??? v ce = 25v, i ce = 12a v ce = 240v, i c = 12a, v ge = 15v v cc = 240v, r g = 5.1 , t j = 25c ??? 480 ??? v cc = 240v, v ge = 15v, r g = 5.1 static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 20a, t j = 150c v ge = 15v, i ce = 40a

www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0246810 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0246810 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0246810 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0246810 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 2 4 6 8 10 12 14 16 v ge (v) 0 40 80 120 160 200 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) t j = 25c t j = 150c i c = 12a

4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-supply voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 0 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 i c ( a ) 160 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 25 50 75 100 125 150 t j , temperature (oc) 400 600 800 1000 1200 1400 1600 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1 s half sine c= 0.4 f c= 0.3 f c= 0.2 f 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms 25 50 75 100 125 150 case temperature (c) 0 40 80 120 160 200 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2 s duty cycle = 0.05 half sine wave 195 200 205 210 215 220 225 230 235 240 v cc, collector-to-supply voltage (v) 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4 f 100c 25c

www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 100 200 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.018158 0.000006 0.557463 0.00017 0.666413 0.001311 0.305061 0.006923 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / i / c 4 4 r 4 r 4 0 10203040 q g total gate charge (nc) 0 4 8 12 16 20 v g e , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 12a

6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st

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dat e code year 0 = 2000 we e k 02 a = as s e mb l y s i t e cod e rectifier international part number p = de s i gnat e s l e ad - f r e e product (opt ional) f530s in the assembly line "l" as s embled on ww 02, 2000 t his is an irf530s wit h lot code 8024 int ernational logo rectifier lot code assembly ye ar 0 = 2000 part number dat e code line l we e k 02 or f 530s logo as s e mb l y lot code note: for the most current drawing please refer to ir website at http://www .irf.com/package/

8 www.irf.com data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2009 note: for the most current drawing p lease refer to ir website at http://www .irf.com/package/
! dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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